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¡@Cleaning Procedure |
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H2SO4 + H2O2 |
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Remove Heavy Organic, Metal
H2SO4 + H2O2 -> H2SO5 + H2O
H2SO5 + Hydro Carbon -> CO2 + H2O + H2 |
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MEGASONIC (950 KHz) |
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Remove Organic, I/II side of Metal.Particle
2H2O2 + C -> CO2 + 2H2O
M + H2O2 -> MO + H2O
MO + 4NH4OH -> M(NH4)4+ |
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Spin Dry |
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¡@Remove the Particle by SC-1 |
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1. Surface Oxidation by H2O2 |

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2. Surface Etching and Particle Lift-off by NH4OH |

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3. Electrical Repulsion by Surface Charge in Alkaline Solution (-OH)
The particles are separated and repelled from the mask surface simultaneously under the SC1 solusion.
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