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After vacuum
evaporate on the glass, then utilize the gate metal to form the
gate pattern, etch gate metal to form gate
electrode.
PR coating after vacuum evaporate active layer & source-drain
layer. |
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After
exposure the light through mask and remove the PR, then about
25% PR still remain in the
slit area. |
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Wet Etching
Source-Drain Layer. |
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Dry Etching
Active Layer. |
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Remove the
remained PR in the slit area by ashing process, wet etching
source-drain layer. |
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Dry Etching
N+ Layer. |
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Completely
remove PR and form TFT. |
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