Slit Mask
After vacuum evaporate on the glass, then utilize the gate metal to form the gate pattern, etch gate metal to form gate electrode.
PR coating after vacuum evaporate active layer & source-drain layer.
After exposure the light through mask and remove the PR, then about 25% PR still remain in the slit area.
Wet Etching Source-Drain Layer.
Dry Etching Active Layer.
Remove the remained PR in the slit area by ashing process, wet etching source-drain layer.
Dry Etching N+ Layer.
Completely remove PR and form TFT.
